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Castaldini, A. ; Cavallini, A. ; Fraboni, B ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | American Institute of Physics | 1998-02-15The deep levels present in semiconducting CdTe and semi-insulating CdTe:Cl and Cd0.8Zn0.2Te have been investigated by means of cathodoluminescence, deep level transient spectroscopy (DLTS), photo-induced current transient spectroscopy, and photo[...]texto impreso
Castaldini, A. ; Cavallini, A. ; Fraboni, B ; Piqueras de Noriega, Javier ; Polenta, L. | IOP publishing ltd | 1996The influence of deep levels on the electrical and optical properties of semiconductors is widely acknowledged. We have utilized several complementary spectroscopic techniques to investigate the deep traps in undoped CdTe, CdTe:Cl and Cd0.8Zn0.2[...]texto impreso
Castaldini, A. ; Cavallini, A. ; Fraboni, B ; Piqueras de Noriega, Javier ; Méndez Martín, Bianchi | IOP publishing ltd | 1994Homogeneity, distribution and nature of defects in GaAs:Te wafers with different doping concentrations have been investigated by SPV (Surface PhotoVoltage) and EBIC (Electron Beam Induced Current) methods. The resulting radial distribution of th[...]texto impreso
Castaldini, A. ; Calvallini, A,. ; Fraboni, B ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Amer Inst Physics | 1994-07-15The distribution in liquid-encapsulated-Czochralski (LEC) GaAs:Te wafers of point and complex defects has been investigated together with their influence on the minority-carrier diffusion length L. Three wafers with different Te-doping concentra[...]
