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Castaldini, A. ; Cavallini, A. ; Fraboni, B. ; Polenta, L. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | American Physical Society | 1996-09-15Deep levels in Cd_(1-x)Zn_xTe have not yet been fully characterized and understood, even though this material is very promising for medical and optoelectronic applications. We have investigated p-type semi-insulating Cd_(0.8)Zn_(0.2)Te with cath[...]texto impreso
Castaldini, A. ; Cavallini, A. ; Polenta, L. ; Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier | Elsevier Science SA | 2002-04-30Technological improvement of GaN-based devices for electronic and optoelectronic applications makes essential both monitoring and controlling point and extended defects, which can have detrimental effects in device performance. For gallium nitri[...]texto impreso
Castaldini, A. ; Cavallini, A: ; Fraboni, B. ; Polenta, L. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | Elsevier Science SA | 1996-12-15We have investigated deep levels in semiconducting and semi-insulating II-VI compounds, namely undoped CdTe, CdTe:Cl and CdZnTe, in order to understand their role in the compensation mechanisms. To this aim Lye have utilized both junction spectr[...]texto impreso
Castaldini, A. ; Cavallini, A. ; Fraboni, B ; Piqueras de Noriega, Javier ; Polenta, L. | IOP publishing ltd | 1996The influence of deep levels on the electrical and optical properties of semiconductors is widely acknowledged. We have utilized several complementary spectroscopic techniques to investigate the deep traps in undoped CdTe, CdTe:Cl and Cd0.8Zn0.2[...]texto impreso
Castaldini, A. ; Cavallini, A. ; Polenta, L. ; Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier | IOP publishing ltd | 2002-12-16The study of the effect of extended defects, present in very large numbers in GaN epilayers, on the material properties and device performance is one of the most important aims of the current research in the field of III nitrides. Thickness stro[...]texto impreso
Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier ; Castaldini, A. ; Cavallini, A. ; Polenta, L. | American Institute of Physics | 2003-08-15Time-resolved cathodoluminescence (TRCL) and photocurrent (PC) spectroscopies have been applied to the study of the yellow band of Si-doped GaN. Measurements carried out combining both techniques unambiguously reveal the complex nature of this b[...]
