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Application of cathodoluminescence microscopy to the study of native acceptors in gallium antimonide
Piqueras de Noriega, Javier ; Méndez Martín, Bianchi ; Panin, G. N. ; Dutta, P. S. ; Dieguez, E. | I E E E | 1996Cathodoluminescence in the scanning electron microscope is used to ivestigate growth and prosess induced defects in GaSb crystals. In particular, luminescence emission has been used to study the nature of acceptor defects present after different[...]texto impreso
Cremades Rodríguez, Ana Isabel ; Santos, M. T. ; Remon, A. ; Garcia, J. A. ; Dieguez, E. ; Piqueras de Noriega, Javier | American Institute of Physics | 1996-05-01Cathodoluminescence and photoluminescence of Bi_(12)Si_(O)20 and Bi_(12)GeO_(20) samples are studied. Both kinds of samples show a dark orange central part or core. Emissions in the blue, green, and red spectral regions are observed. The 640 nm [...]texto impreso
Cathodoluminescence and photoluminescence in the core region of Bi_12GeO_20 and Bi_12SiO_20 crystals
Cremades Rodríguez, Ana Isabel ; Santos, M. T. ; Remon, A. ; Garcia, J. A. ; Dieguez, E. ; Piqueras de Noriega, Javier | American Institute of Physics | 1996-05-01Cathodoluminescence and photoluminescence of Bi_12SiO_20 and Bi_12GeO_20 samples are studied. Both kinds of samples show a dark orange central part or core. Emissions in the blue, green, and red spectral regions are observed. The 640 nm band is [...]texto impreso
Pal, U ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Dieguez, E. | Amer Inst Physics | 1995-08-01Cathodoluminescence (CL) microscopic techniques have been used to study the spatial distribution of structural defects and the deep levels in CdTe:Ge bulk crystals. The effect of Ge doping with concentrations of 10(17) and 10(19) cm(-3) on the c[...]texto impreso
Chioncel, M.F. ; Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier ; Vincent López, José Luis ; Bermudez, V. ; Dieguez, E. | IEEE | 2004The nature and the spatial distribution of radiative defects in In(X)Ga(1-x)Sb grown by the vertical Bridgman method have been studied by cathodoluminescence (CL) in a scanning electron microscope. The CL results have been complemented by X-ray [...]texto impreso
Hidalgo Alcalde, Pedro ; Plaza, J. L. ; Méndez Martín, Bianchi ; Dieguez, E. ; Piqueras de Noriega, Javier | Institute of Physics | 2002-12-16The luminescence of Te-doped GaSb crystals codoped with Er2O3 has been studied by means of cathodoluminescene (CL) using a scanning electron microscope. Doping with erbium oxide causes a substantial increase of the luminescence intensity of the [...]texto impreso
Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dutta, P. S. ; Dieguez, E. | Elsevier Science SA | 1996-12-15We present the homogeneity and luminescence properties of bulk GaSb obtained by the cathodoluminescence (CL) technique in the scanning electron microscope. The samples used in this study are as-grown undoped and impurity diffused (tellurium) and[...]texto impreso
Pal, U ; Piqueras de Noriega, Javier ; Dutta, P. S. ; Bhat, H. L. ; Dubey, G. C. ; Kumar, V. ; Dieguez, E. | Materials Research Soc | 1996texto impreso
Méndez Martín, Bianchi ; Dutta, P. S. ; Piqueras de Noriega, Javier ; Dieguez, E. | Amer Inst Physics | 1995-10-30The homogeneity and luminescence properties of undoped bulk GaSb have been studied by the cathodoluminescence (CL) technique in the scanning electron microscope. CL images have revealed a nonuniform distribution of native defects in GaSb wafers [...]texto impreso
Hidalgo Alcalde, Pedro ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Abellá, M. ; Saucedo, E. ; Dieguez, E. | Springer | 2008-08Bi doped and Bi and Yb codoped CdTe crystals grown by the Bridgman method have been characterized by cathodoluminescence (CL) in the scanning electron microscope. CL images show a dense network of highly decorated grain boundaries in the Bi dope[...]texto impreso
Chioncel, M. F. ; Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier ; Vincent, J. ; Bermudez, V. ; Dieguez, E. | Elsevier Science B.V. | 2004-07-15The nature and the spatial distribution of radiative defects in InxGa1-xSb grown by the vertical Bridgman method have been studied by cathodoluminescence (CL) in a scanning electron microscope. The CL results have been complemented by X-ray micr[...]texto impreso
Panin, G. ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Dieguez, E. | Elsevier Science SA | 1996-12-15The origin and spatial distribution of radiative defects in undoped and Ge-doped CdTe wafers have been studied by CL spectroscopy and imaging techniques in the scanning electron microscope (SEM) before and after the wafer annealing in HgI2 vapor[...]texto impreso
Díaz-Guerra Viejo, Carlos ; Vincent, J. ; Piqueras de Noriega, Javier ; Bermudez, V. ; Dieguez, E. | American Institute of Physics | 2005-01-15The radiative recombination properties of Se-doped GaSb crystals grown by the Bridgman method have been investigated by cathodoluminescence (CL) microscopy and spectroscopy in the scanning electron microscope. A CL band centered at about 765 meV[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Ruiz, C. ; Bermudez, V. ; Piqueras de Noriega, Javier ; Dieguez, E. | Elsevier Science SA | 2005-07-25b-doped GaSb ingots have been grown by the Bridgman method. The defect structure and compositional homogeneity of the crystals have been investigated by cathodoluminescence and X-ray microanalysis in the scanning electron microscope. The nature [...]texto impreso
Vincent, J. ; Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier ; Amariei, A. ; Polychronladis, E.K. ; Dieguez, E. | Elsevier Science B.V. | 2006-03-15Undoped and Te-doped GaSb ingots have been grown by the vertical feeding method. The structural, optical and electrical properties of the grown crystals were respectively investigated by X-ray diffraction, transmission electron microscopy, catho[...]
