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Aceves, R. ; Perez Sala, R. ; Barboza Flores, M. ; Pal, U ; Zaldivar, M.H. ; Piqueras de Noriega, Javier | Taylor & Francis Ltd | 2001Spectral cathodoluminescence of KCl:EU2+ (0.2% wt) crystals has been measured at different temperatures. In the 80-300 K temperature range the luminescence consists of three main broad emission bands with maxima around 418, 452, and 619nm. Based[...]texto impreso
Zaldivar, M.H. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | Materials Research Society | 1998Cathodoluminescence (CL) in the scanning electron microscope has been used to investigate the variation along the growth axis direction of luminescence emission from epitaxial GaN films. CL spectra recorded at different positions of the sample c[...]texto impreso
Zaldivar, M.H. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier ; Solís, J. | American Institute of Physics | 1999-01-15Pulsed laser treatments have been performed in GaN samples of both n- and p-type conductivity. The laser induced changes have been monitored by emissive mode and cathodoluminescence (CL) in a scanning electron microscope. Emissive mode observati[...]texto impreso
Zaldivar, M.H. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | IOP publishing ltd | 1998-08The effect of indentation on the cathodoluminescence (CL) of GaN:Si epitaxial films has been investigated in the scanning electron microscope. Deformation produces changes in the defect structure which are monitored through the changes induced i[...]texto impreso
Zaldivar, M.H. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | American Institute of Physics | 1998-01-01Cathodoluminescence (CL) in the scanning electron microscope is used to investigate the nature of defects responsible for the luminescence associated with round and hexagonal-like topographic features of GaN:Si films. Round hillocks of the size [...]texto impreso
Zaldivar, M.H. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | American Institute of Physics | 1998-03-01Cathodoluminescence (CL) in the scanning electron microscope has been used to study cross-sectional samples on GaN epitaxial films grown on sapphire. Increased CL emission, attributed to the presence of stacking faults and decorated dislocations[...]texto impreso
Zaldivar, M.H. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | American Institute of Physics | 2001-07-15Remote electron beam induced current (REBIC) measurements have been carried out to investigate electrically active regions in Si doped GaN films. REBIC bright-dark contrast has been observed in the border of growth, round or pyramidal, hillocks,[...]
