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Valdueza-Felip, Sirona ; Blasco, Rodrigo ; Olea Ariza, Javier ; Diaz-Lobo, Alba ; Braña, Alejandro F. ; Naranjo, Fernando B. | MDPI | 2020-05-19We investigate the photovoltaic performance of solar cells based on n-AlxIn1texto impreso
García Hernansanz, Rodrigo ; García Hemme, Eric ; Montero Álvarez, Daniel ; Prado Millán, Álvaro del ; Olea Ariza, Javier ; San Andres Serrano, Enrique ; Mártil de la Plaza, Ignacio ; González Díaz, Germán | Institute of Electrical and Electronics and Engineers (IEEE) | 2016We have deposited intrinsic amorphous silicon (a-Si:H) using the electron cyclotron resonance (ECR) chemical vapor deposition technique in order to analyze the a-Si:H/c-Si heterointerface and assess the possible application in heterojunction wit[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | American Institute of Physics | 2011-09-15A detailed study on the resulting impurity profile in Si samples implanted with high doses of Ti and subsequently annealed by pulsed-laser melting (PLM) is reported. Two different effects are shown to rule the impurity profile redistribution dur[...]texto impreso
Pérez, E. ; Dueñas, S. ; Castán, H. ; García, H. ; Bailón, L. ; Montero, Daniel ; García Hernansanz, Rodrigo ; García Hemme, Eric ; Olea Ariza, Javier ; González Díaz, Germán | American Institute of Physics | 2015-12-28The energy levels created in supersaturated n-type silicon substrates with titanium implantation in the attempt to create an intermediate band in their band-gap are studied in detail. Two titanium ion implantation doses (1013 cm-2 and 1014 cm-2)[...]texto impreso
Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | Hindawi Publishing Corporation | 2013In the framework of the third generation of photovoltaic devices, the intermediate band solar cell is one of the possible candidates to reach higher efficiencies with a lower processing cost. In this work, we introduce a novel processing method [...]texto impreso
Garcia, Hector ; Castán, Helena ; Dueñas, Salvador ; Bailón, Luis ; García Hernansanz, Rodrigo ; Olea Ariza, Javier ; Prado Millán, Álvaro del ; Mártil de la Plaza, Ignacio | Springer | 2016-07-16A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are[...]texto impreso
Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | IOP publishing ltd | 2013-04-03We investigated the electrical transport properties of ultraheavily Ti-implanted silicon layers subsequently pulsed laser melted (PLM). After PLM, the samples exhibit anomalous electrical behaviour in sheet resistance and Hall mobility measureme[...]texto impreso
Castán, Helena ; Pérez, Eduardo ; Dueñas, Salvador ; Bailón, Luis ; Olea Ariza, Javier ; Pastor Pastor, David ; García Hemme, Eric ; Irigoyen Irigoyen, Maite ; González Díaz, Germán | American Institute of Physics (AIP) | 2012Intermediate band silicon solar cells have been fabricated by Titanium ion implantation and laser annealing. A two-layer heterogeneous system, formed by the implanted layer and by the unimplanted substrate is obtained. In this work we present el[...]texto impreso
Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | IEEE | 2013We have fabricated titanium and vanadium supersaturated silicon layers on top of a silicon substrate by means of ion implantation and pulsed laser melting processes. This procedure has proven to be suitable to fabricate an intermediate band (IB)[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | IOP publishing ltd | 2009-04-21In this paper we show that pulsed laser melted high dose implantation of Ti in Si, above the Mott transition, produces an impurity band (IB) in this semiconductor. Using the van der Pauw method and Hall effect measurements we find strong laminat[...]texto impreso
Pérez, E. ; Castán, H. ; García, H. ; Dueñas, S. ; Bailón, L. ; Montero Álvarez, Daniel ; García-Hernansanz, R. ; García Hemme, Eric ; Olea Ariza, Javier ; González Díaz, Germán | American Institute of Physics | 2015-01In the attempt to form an intermediate band in the bandgap of silicon substrates to give it the capability to absorb infrared radiation, we studied the deep levels in supersaturated silicon with titanium. The technique used to characterize the e[...]texto impreso
González Díaz, Germán ; García Hemme, Eric ; Olea Ariza, Javier ; Pastor Pastor, David ; Bailón, L. ; Castán, H. ; Dueñas, S. ; García, H. ; Pérez, E. | American Institute of Physics | 2013-01-14Intermediate band formation on silicon layers for solar cell applications was achieved by titanium implantation and laser annealing. A two-layer heterogeneous system, formed by the implanted layer and by the un-implanted substrate, was formed. I[...]texto impreso
Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | Amer Inst Physics | 2013-07-15We have analyzed the spectral sub-bandgap photoresponse of silicon (Si) samples implanted with vanadium (V) at different doses and subsequently processed by pulsed-laser melting. Samples with V concentration clearly above the insulator-metal tra[...]texto impreso
Franco Peláez, Francisco Javier ; Antoranz Canales, Pedro ; Castillo Morales, África ; García Payo, M. Carmen ; Olea Ariza, Javier | 2015-02-15Incidencias en la creación de una base de dato online de software científico de uso gratuito para alumnos de las titulaciones de la Facultada de Físicastexto impreso
Mártil de la Plaza, Ignacio ; Olea Ariza, Javier ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Elsevier Science Ltd | 2006-12The physical and electrical properties of hafnium oxide (HfO2) thin films deposited by high pressure reactive sputtering (HPRS) have been studied as a function of the Ar/O-2 ratio in the sputtering gas mixture. Transmission electron microscopy s[...]
