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Hernández Martín, David ; Gallego Toledo, Fernando ; Tornos Castillo, Javier ; Rouco Gómez, Víctor ; Beltrán Finez, Juan Ignacio ; Munuera, C. ; Sánchez Manzano, David ; Cabero Piris, Mariona ; Cuéllar Jiménez, Fabián Andrés ; Arias Serna, Diego ; Sánchez Santolino, Gabriel ; Mompean, F. J. ; Gárcia Hernández, M. ; Rivera Calzada, Alberto Carlos ; Pennycook, S. J. ; Varela del Arco, María ; Muñoz, M. C. ; Sefrioui, Zouhair ; León Yebra, Carlos ; Santamaría Sánchez-Barriga, Jacobo | American Physical Society | 2020-12-30The persistence of ferroelectricity in ultrathin layers relies critically on screening or compensation of polarization charges which otherwise destabilize the ferroelectric state. At surfaces, charged defects play a crucial role in the screening[...]texto impreso
En este trabajo, realizamos un análisis de la interacción entre la ferroelectricidad, las paredes de dominio ferroeléctrico cargadas y el memristor en las dimensiones reducidas de una unión túnel. Para alcanzar este objetivo, crecemos bicapas de[...]texto impreso
Tornos Castillo, Javier ; Gallego Toledo, Fernando ; Hernández Martín, David ; Orfila Rodríguez, Gloria ; Cabero Piris, Mariona ; Cuéllar Jiménez, Fabián Andrés ; Arias Serna, Diego ; Rivera Calzada, Alberto Carlos ; Sefriuoi, Zouhair ; León Yebra, Carlos ; Santamaría Sánchez-Barriga, Jacobo | American Physical Society | 2019-01-22The electronic reconstruction occurring at oxide interfaces may be the source of interesting device concepts for future oxide electronics. Among oxide devices, multiferroic tunnel junctions are being actively investigated as they offer the possi[...]texto impreso
Shen, Xiao ; Pennycook, Timothy J. ; Hernández Martín, David ; Pérez, Ana ; Varela del Arco, María ; Puzyrev, Yevgeniy S. ; León Yebra, Carlos ; Sefrioui, Zouhair | Wiley-Blackwell | 2016-08-19Memristive switching serves as the basis for a new generation of electronic devices. Memristors are two-terminal devices in which the current is turned on and off by redistributing point defects, e.g., vacancies, which is difficult to control. M[...]texto impreso
Cabero Piris, M. ; Nagy, K. ; Gallego, F. ; Sander, A. ; Rio, M. ; Cuellar, F.A. ; Tornos, J. ; Hernández Martín, David ; Nemes, Norbert Marcel ; Mompean, F. ; Gárcia Hernández, M. ; Rivera Calzada, Alberto Carlos ; Sefrioui, Zouhair ; Reyren, N. ; Feher, T. ; Varela del Arco, María ; León Yebra, Carlos ; Santamaría Sánchez-Barriga, Jacobo | American Institute of Physics | 2017-09Controlling magnetic anisotropy is an important objective towards engineering novel magnetic device concepts in oxide electronics. In thin film manganites, magnetic anisotropy is weak and it is primarily determined by the substrate, through indu[...]
