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Application of cathodoluminescence microscopy to the study of native acceptors in gallium antimonide
Piqueras de Noriega, Javier ; Méndez Martín, Bianchi ; Panin, G. N. ; Dutta, P. S. ; Dieguez, E. | I E E E | 1996Cathodoluminescence in the scanning electron microscope is used to ivestigate growth and prosess induced defects in GaSb crystals. In particular, luminescence emission has been used to study the nature of acceptor defects present after different[...]texto impreso
Panin, G. N. ; Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier | Amer Inst Physics | 1998-04-21A correlative study of the electrically active defects of CdxHg1-xTe and CdTe crystals has been carried out using a scanning electron microscope/scanning tunneling microscope (SEM/STM) combined system. Charged structural and compositional defect[...]texto impreso
Panin, G. N. ; Piqueras de Noriega, Javier ; Sochinskii, N. ; Dieguez, E. | Amer Inst Physics | 1997-02-17The a?-HgI_2/CdTe:Ce heterostructures have been studied by cathodoluminescence (CL) in the scanning electron microscope. The alpha-HgI2 expitaxial growth was shown to cause an enhancement of the CL intensity in a layer of the substrate extending[...]texto impreso
Panin, G. N. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | IOP publishing ltd | 1996-09The effect of ion milling on the defect structure of CdTe crystals has been investigated in the scanning electron microscope by cathodoluminescence. Enhancement in the luminescence intensity is observed after ion treatment. Luminescence spectra [...]texto impreso
Panin, G. N. ; Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier | IOP publishing ltd | 1998-06A combined scanning electron microscope-scanning tunnelling microscope (SEM-STM) system has been used to characterize CdxHg1-xTe and CdTe crystals, The electron beam induced current (EBIC) mode of the SEM shows the existence of inhomogeneities i[...]texto impreso
Panin, G. N. ; Dutta, P. S. ; Piqueras de Noriega, Javier ; Dieguez, E. | Amer Inst Physics | 1995-12-11Inversion in conductivity type of GaSb from p- to n- has been observed as a result of argon ion beam milling. Electron beam induced current (EBIC) measurements have been employed for detecting the type conversion. Enhancement in the luminescence[...]
