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Application of cathodoluminescence microscopy to the study of native acceptors in gallium antimonide
Piqueras de Noriega, Javier ; Méndez Martín, Bianchi ; Panin, G. N. ; Dutta, P. S. ; Dieguez, E. | I E E E | 1996Cathodoluminescence in the scanning electron microscope is used to ivestigate growth and prosess induced defects in GaSb crystals. In particular, luminescence emission has been used to study the nature of acceptor defects present after different[...]texto impreso
Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dutta, P. S. ; Dieguez, E. | Elsevier Science SA | 1996-12-15We present the homogeneity and luminescence properties of bulk GaSb obtained by the cathodoluminescence (CL) technique in the scanning electron microscope. The samples used in this study are as-grown undoped and impurity diffused (tellurium) and[...]texto impreso
Pal, U ; Piqueras de Noriega, Javier ; Dutta, P. S. ; Bhat, H. L. ; Dubey, G. C. ; Kumar, V. ; Dieguez, E. | Materials Research Soc | 1996texto impreso
Méndez Martín, Bianchi ; Dutta, P. S. ; Piqueras de Noriega, Javier ; Dieguez, E. | Amer Inst Physics | 1995-10-30The homogeneity and luminescence properties of undoped bulk GaSb have been studied by the cathodoluminescence (CL) technique in the scanning electron microscope. CL images have revealed a nonuniform distribution of native defects in GaSb wafers [...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dutta, P. S. | Materials Research Society | 1998Cathodoluminescence (CL) in the scanning electron microscope (SEM) has been used to investigate the effect of doping with an isoelectronic dopant, aluminum, on the native accepters and on the general structure of extended defects of gallium anti[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dutta, P. S. ; Dieguez, E. | IOP publishing ltd | 1997Cathodoluminescence (CL) in the scanning electron microscope (SEM) has been used to investigate the effect of doping with chromium and vanadium on the native accepters and on the general structure of extended defects of gallium antimonide single[...]texto impreso
Dutta, P. S. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dieguez, E. ; Bhat, H. L. | Amer Inst Physics | 1996-07-15Diffusion of tellurium In undoped p-GaSb has been carried out. Using the cathodoluminescence and photoluminescence techniques, the luminescence centers in Te-diffused samples have been identified and compared with the Te-doped bulk GaSb. Fundame[...]texto impreso
Panin, G. N. ; Dutta, P. S. ; Piqueras de Noriega, Javier ; Dieguez, E. | Amer Inst Physics | 1995-12-11Inversion in conductivity type of GaSb from p- to n- has been observed as a result of argon ion beam milling. Electron beam induced current (EBIC) measurements have been employed for detecting the type conversion. Enhancement in the luminescence[...]texto impreso
Dutta, P. S. ; Sreedhar, A. K. ; Bhat, H. L. ; Dubey, G. C. ; Kumar, V. ; Dieguez, E. ; Pal, U. ; Piqueras de Noriega, Javier | American Institute of Physics | 1996-03-15Passivation of point and extended defects in GaSb has been observed as a result of hydrogenated amorphous silicon (a-Si:H) treatment by the glow discharge technique. Cathodoluminescence (CL) images recorded at various depths in the samples clear[...]
