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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; García, S. ; Martín Pacheco, Jaime Miguel ; Castán, E. ; Dueñas, S. | American Institute of Physics | 1995-11-01Current-voltage, small-signal measurements, and deep-level transient spectroscopy (DLTS) spectra of p-n junctions made by Mg implantation into undoped InP are described. The I-V characteristics show that the dominant conduction mechanism at forw[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; García, S. ; Martín, J.M. | Elsevier Science SA | 1998-03-02SiNx:H films have been deposited using two different ECR plasma sources attached to a similar deposition chamber, a Compact source and an AX4500 source both from Astex. The sources mainly differ in the discharge volume, 55 cm(3) and 936 cm(3), r[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; García, S. ; Martín, J.M. ; Fernández, M. | Elsevier Science SA | 1998-04-01The influence of the gas flow ratio (R) (O-2/SiH4 and N-2/SiH4) and the deposition temperature on the physical properties of SiOy and SiNx:H thin films deposited by the ECR-CVD method is analyzed. Two deposition regimes limited by R = 1, are fou[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; García, S. ; Castán, E. ; Dueñas, S. ; Fernández, M. | American Institute of Physics | 1998-01-01We have analyzed the electrical properties and bonding characteristics of SiNx:H thin films deposited at 200 degrees C by the electron cyclotron resonance plasma method. The films show the presence of hydrogen bonded to silicon (at the films wit[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Martín, J.M. ; García, S. | IEEE-Inst. Electrical Electronics Engineers Inc. | 1998-08We present an electrical characterization of discrete Bipolar Junction Transistor (BJT) devices with nonuniform doped emitter and base zones. The measurement of the I-V and C-V characteristics of the emitter-base and the collector-base junctions[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; García, S. ; Castán, E. ; Dueñas, S. ; Fernández, M. | American Institute of Physics | 1998-01-01We have obtained Al/SiNx:H/InP metal-insulator-semiconductor devices depositing SiNx:H thin films by the electron cyclotron resonance plasma method at 200 degrees C. The electrical properties of the structures were analyzed according to capacita[...]texto impreso
Ercilla, Gemma ; Alonso Martínez, Belén ; Casas Layola, David ; Estrada Llacer, Ferran ; Farran, M. ; García, M. ; Gallart Muset, Josep ; Díaz Cusí, Jordi ; Ruiz, M. ; Somoza Losada, Luis ; Maestro, Adolfo ; Medialdea Cela, Teresa ; León Buendía, Ricardo ; Llave, E. ; Gràcia Mont, Eulalia ; Dañobeitia, J.J. ; Garcia, M.A. ; Vizcaíno, M.A. ; Díez Tagarro, Susana ; Muñoz, J.A. ; Roca, E. ; Fernández, O. ; Carreras Sangrà, Nelson ; Benjumea, B. ; Mencos, J. ; Vázquez, Juan Tomás ; Sayazo, M. ; Pérez, C. ; Córdoba, D. ; Octavio de Toledo Rodríguez, María del Mar ; Agudo, Luis Miguel ; Vilas Martín, Federico ; García, S. ; Hernández Molina, F.J. ; Rey, D. ; Rubio, B. ; Álvarez, R. ; Durán, R. ; Fernández, C.A. ; Ferrin, A. ; Jacob Mohamed, K. | Sociedad Geológica de España. | 2004Potential geological hazard assessment has been carried out in the area where the Prestige vessel was sunk using a broad database that comprises: multibeam, high and ultra-high resolution seismic profiles, gravity cores, onland seismicity statio[...]texto impreso
Mártil de la Plaza, Ignacio ; Bravo, D. ; Fernández, M. ; García, S. ; López, F.J. | American Institute of Physics | 1995-11-27SiNx:H films with a wide composition range and, some of them, with low oxygen content are deposited at room temperature. The defects observed in the films are attributed to Si-dangling bonds, with a structure depending on film composition. For t[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; García, S. ; Fernández, M. | IOP publishing ltd | 1997-12SiNx:H thin films were deposited by the electron cyclotron resonance plasma method at low substrate temperature (200 degrees C) to fabricate metal-insulator-semiconductor devices. The effects of film properties on the electrical characteristics [...]
