Información del autor
Documentos disponibles escritos por este autor (7)
Añadir el resultado a su cesta Hacer una sugerencia Refinar búsqueda
texto impreso
González Díaz, Germán ; Martín, J.M. ; Barbolla, J. ; Castán, E. ; Dueñas, S. ; Pinacho, R. ; Quintanilla, L. | American Institute of Physics | 1997-04-01In this work, we investigate the deep levels present in ion implanted and rapid thermal annealed (RTA) InP p(+)-n junctions. The samples were implanted with magnesium or coimplanted with magnesium and phosphorus. These levels were characterized [...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; García, S. ; Martín, J.M. | Elsevier Science SA | 1998-03-02SiNx:H films have been deposited using two different ECR plasma sources attached to a similar deposition chamber, a Compact source and an AX4500 source both from Astex. The sources mainly differ in the discharge volume, 55 cm(3) and 936 cm(3), r[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; García, S. ; Martín, J.M. ; Fernández, M. | Elsevier Science SA | 1998-04-01The influence of the gas flow ratio (R) (O-2/SiH4 and N-2/SiH4) and the deposition temperature on the physical properties of SiOy and SiNx:H thin films deposited by the ECR-CVD method is analyzed. Two deposition regimes limited by R = 1, are fou[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Martín, J.M. ; García, S. | IEEE-Inst. Electrical Electronics Engineers Inc. | 1998-08We present an electrical characterization of discrete Bipolar Junction Transistor (BJT) devices with nonuniform doped emitter and base zones. The measurement of the I-V and C-V characteristics of the emitter-base and the collector-base junctions[...]texto impreso
González Díaz, Germán ; Martín, J.M. ; Artús, L. ; Cuscó, R. ; Ibañez, J. | American Institute of Physics | 1997-10-15We have studied the lattice recovery by rapid thermal annealing of Si+-implanted InP using Raman spectroscopy. The crystallinity recovery for different annealing temperatures of samples totally amorphized by the implantation can be monitored by [...]texto impreso
González Díaz, Germán ; Martín, J.M. ; Artús, L. ; Cuscó, R. | American Physical Society | 1994-10-15We present Raman spectra of InP measured under nonresonant conditions revealing multiphonon processes up to fifth order. Using an incident photon energy in the absorption region of the compound but far from any of its interband transitions, nonr[...]texto impreso
Las variedades de yeso diagenético más abundantes en la Depresión de Granada, son las siguientes: yeso microcristalino de color crema que corresponde a calizas lacustres reemplazadas sinsedimentariamente; yeso alabastrino resultado de la transfo[...]
