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Hidalgo Alcalde, Pedro ; Plaza, J. L. ; Méndez Martín, Bianchi ; Dieguez, E. ; Piqueras de Noriega, Javier | Institute of Physics | 2002-12-16The luminescence of Te-doped GaSb crystals codoped with Er2O3 has been studied by means of cathodoluminescene (CL) using a scanning electron microscope. Doping with erbium oxide causes a substantial increase of the luminescence intensity of the [...]texto impreso
Plaza, J. L. ; Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Castaño, J. L. ; Dieguez, E. | Elsever science BV | 1999-03The distribution of Er in bulk GaSb ingots grown by vertical Bridgman technique has been investigated for different concentrations. The resistivity, mobility and carrier density were analysed. The formation of Er-Sb compounds and the incorporati[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plaza, J. L. ; Dieguez, E. | Trans Tech-Scitec Publications LTD | 1998The interest of rare earth doping of semiconductors has increased in the last years due to its possible applications in optical devices requiring temperature stability. Advantages of these systems are the presence of a sharp temperature independ[...]texto impreso
Plaza, J. L. ; Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Castaño, J. L. | Elsevier Science SA | 2001-04-24In this work pure and Gd-doped GaSb ingots with different dopant concentrations were grown by the Bridgman Method. The compositional and electrical analysis carried out on these materials have shown the dependence of these results on the initial[...]texto impreso
Plaza, J. L. ; Hidalgo Alcalde, Pedro ; Piqueras de Noriega, Javier ; Dieguez, E. | Sociedad Española de Cerámica y Vidrio | 2000-07En este trabajo se ha realizado el estudio de cristales de GaSb crecidos por el método Bridgman y dopados con Er y Nd con distintas concentraciones. Se han realizado análisis de absorción atómica pudiéndose obtener el coeficiente de segregación [...]texto impreso
Plaza, J. L. ; Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dieguez, E. | Elsevier Science SA | 2000-02-14In this work several changes induced by polishing, chemical etching and thermal treatment in the properties of Er- and Nd-doped GaSb substrates with different doping levels grown by the vertical Bridgman method have been studied. The analysis ha[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plaza, J. L. ; Dieguez, E. | American Institute of Physics | 1999-08-01Er doped GaSb single crystals have been studied by scanning tunneling spectroscopy (STS) and cathodoluminescence (CL) in a combined scanning electron microscope-scanning tunnelling microscope system. The surface band gap in doped samples has bee[...]texto impreso
Plaza, J. L. ; Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dieguez, E. | Elsevier Science SA | 2002-04-30The defect structure of Te-doped GaSb samples co-doped with Er_2O_3 and grown by the vertical Bridgman technique has been analysed. This study was carried out for different Er and Te concentrations. The defect structure of the samples has been a[...]texto impreso
The scope of this paper is to analyse the effect of Au and Cr impurities, diffused onto GaSb substrates on the formation of nanodots created by LEIS using Ar+ ions It is concluded that oblique incidence in rotating configuration delays the forma[...]
