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Pal, U. ; Piqueras de Noriega, Javier ; Serrano, M. D. ; Sochinskii, N. V. | Springer Verlag | 1995-12CathodoLuminescence studies (CL) have been carried out on red mercuric-iodide (?-HgI_2) crystals and platelets grown by the vapor transport method. Panchromatic CL images revealed inhomogeneous distribution of growth-induced dislocations and ter[...]texto impreso
Díaz-Guerra Viejo, Carlos ; Pal, U. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | Akademie Verlag GMBH | 1995-01-16The effect of indentation on the cathodoluminescence (CL) of CdTe in the scanning electron microscope is investigated. Deformation produces deep level emission changes, in particular, a relative intensity increase of the 1.4 and 1.1 eV bands, ex[...]texto impreso
Sochinskii, N. V. ; Dieguez, E. ; Pal, U. ; Piqueras de Noriega, Javier ; Fernández Sánchez, Paloma ; Agullorueda, F. | IOP publishing ltd | 1995-06Undoped and doped CdTe wafers have been thermally annealed in Ga melt, or in Cd vapour or in a vacuum to eliminate Te precipitates from the volume of the wafers. The effect of annealing conditions on the transformation of Te precipitates has bee[...]texto impreso
Dutta, P. S. ; Sreedhar, A. K. ; Bhat, H. L. ; Dubey, G. C. ; Kumar, V. ; Dieguez, E. ; Pal, U. ; Piqueras de Noriega, Javier | American Institute of Physics | 1996-03-15Passivation of point and extended defects in GaSb has been observed as a result of hydrogenated amorphous silicon (a-Si:H) treatment by the glow discharge technique. Cathodoluminescence (CL) images recorded at various depths in the samples clear[...]texto impreso
Pal, U. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier ; Serrano, M. D. ; Dieguez, E. | IOP publishing ltd | 1994The nature of the 1.4eV band in CdTe is studied by cathodoluminescence. Results indicate that the band is not related only to surface defects.texto impreso
The effect of Cl doping on the luminescence properties of CdTe is investigated by cathodoluminescence microscopy. Cl enhances the 1.4 eV emission and retards the appearance of the tellurium vacancy related emission band. The behaviour under anne[...]texto impreso
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Pal, U. ; Piqueras de Noriega, Javier ; Fernández Sánchez, Paloma ; Serrano, M. D. ; Dieguez, E. | American Institute of Physics | 1994-09-15Cathodoluminescence in the scanning electron microscope has been used to investigate the relationship of point defects in CdTe and CdTe:V with luminescence bands at 1.40 and 1.13 eV. V has been found to inhibit the 1.40 eV luminescence. Annealin[...]
