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Pal, U ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Dieguez, E. | Amer Inst Physics | 1995-08-01Cathodoluminescence (CL) microscopic techniques have been used to study the spatial distribution of structural defects and the deep levels in CdTe:Ge bulk crystals. The effect of Ge doping with concentrations of 10(17) and 10(19) cm(-3) on the c[...]texto impreso
Pal, U. ; Piqueras de Noriega, Javier ; Serrano, M. D. ; Sochinskii, N. V. | Springer Verlag | 1995-12CathodoLuminescence studies (CL) have been carried out on red mercuric-iodide (?-HgI_2) crystals and platelets grown by the vapor transport method. Panchromatic CL images revealed inhomogeneous distribution of growth-induced dislocations and ter[...]texto impreso
Hidalgo Alcalde, Pedro ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Abellá, M. ; Saucedo, E. ; Dieguez, E. | Springer | 2008-08Bi doped and Bi and Yb codoped CdTe crystals grown by the Bridgman method have been characterized by cathodoluminescence (CL) in the scanning electron microscope. CL images show a dense network of highly decorated grain boundaries in the Bi dope[...]texto impreso
Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Muñoz, V. ; Bernardi, S. | Amer Inst Physics | 1997-11-24CdTe(100)/GaAs(100) and CdTe(lll)/CdTe(lll) layers grown by metalorganic vapor phase epitaxy (MOVPE) were investigated The layers were recrystallized to improve their morphology by scanning the surface with a 100 mu m diameter spot from an Ar io[...]texto impreso
Panin, G. ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Dieguez, E. | Elsevier Science SA | 1996-12-15The origin and spatial distribution of radiative defects in undoped and Ge-doped CdTe wafers have been studied by CL spectroscopy and imaging techniques in the scanning electron microscope (SEM) before and after the wafer annealing in HgI2 vapor[...]texto impreso
Sochinskii, N. V. ; Dieguez, E. ; Pal, U. ; Piqueras de Noriega, Javier ; Fernández Sánchez, Paloma ; Agullorueda, F. | IOP publishing ltd | 1995-06Undoped and doped CdTe wafers have been thermally annealed in Ga melt, or in Cd vapour or in a vacuum to eliminate Te precipitates from the volume of the wafers. The effect of annealing conditions on the transformation of Te precipitates has bee[...]texto impreso
Sochinskii, N. V. ; Saucedo, E. ; Abellan, M. ; Rodríguez Fernández, José ; Hidalgo Alcalde, Pedro ; Piqueras de Noriega, Javier ; Ruiz, C.M. ; Bermudez, V. ; Dieguez, E. | Elsevier Science BV | 2008-04Cadmium telluride (CdTe) crystals and epitaxial layers were grown by the vertical Bridgman method and vapor-phase epitaxy, respectively, to obtain the high-resistive material suitable for X- and gamma-ray detectors. The crystals and layers were [...]texto impreso
Influence of thermal environments on the growth of bulk cadmium zinc telluride (CZT) single crystals
Carcelen, V. ; Vijayan, N. ; Rodríguez Fernández, J. ; Hidalgo Alcalde, Pedro ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Pérez, J. M. ; Dieguez, E. | Elsevier Science BV | 2009-02-15The II-VI compound semiconductor crystal cadmium zinc telluride (CZT) is very important in the field of room-temperature radiation detectors and medical imaging applications. In the present study, bulk CZT single crystal has been grown by (i) os[...]texto impreso
Rodríguez Fernández, J. ; Carcelen, V. ; Hidalgo Alcalde, Pedro ; Vijayan, N. ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Pérez, J. M. ; Dieguez, E. | Amer Inst Physics | 2009-08-15Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 10^19 at./cm^3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence (CL), an[...]texto impreso
Rodríguez Fernández, José ; Carcelen, V. ; Hidalgo Alcalde, Pedro ; Vijayan, N. ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Pérez, J. M. ; Dieguez, E. | Institute of Physics | 2004-01-21The cathodoluminescence (CL) technique is used to analyse the radiative recombination properties of four distinct silicon carbide (SiC) samples: a 6H-SiC n^+ -type Lely wafer, two off-axis 4H-SiC epitaxial layers of n type and p type, and a (11 [...]
