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Albrecht, M. ; Cremades Rodríguez, Ana Isabel ; Krinke, J. ; Christiansen, S. ; Ambacher, O. ; Piqueras de Noriega, Javier ; Strunk, H. P. ; Stutzmann, M. | Wiley-V C H Verlag Gmbh | 1999-11We analyse the recombination and scattering at dislocations in Si doped AlGaN layers by transmission electron microscopy (TEM), electron beam induced current (EBIC) and cathodoluminescence. We show that c-type screw dislocations are nonradiative[...]texto impreso
Cremades Rodríguez, Ana Isabel ; Albrecht, M. ; Krinke, J. ; Dimitrov, R. ; Stutzmann, M. ; Strunk, H. P. | American Institute of Physics | 2000-03-01Combined electron beam induced current and transmission electron microscopy (TEM) measurements have been performed on both undoped and Si-doped AlGaN epitaxial films with aluminum contents x ranging from x = 0 to x = 0.79, in order to correlate [...]texto impreso
Herrera, M. ; Cremades Rodríguez, Ana Isabel ; Stutzmann, M. ; Piqueras de Noriega, Javier | Academic Press Ltd- Elsevier Science Ltd | 2009-04Mn doped GaN films have been studied by conductive Atomic Force Microscopy (AFM), Cathodoluminescence (CL) and Electron Beam Induced Current (EBIC). AFM measurements revealed the presence of pinholes with diameters between 130 and 380 nm. The di[...]texto impreso
Herrera, M. ; Cremades Rodríguez, Ana Isabel ; Stutzmann, M. ; Piqueras de Noriega, Javier | Academic Press Ltd- Elsevier Science Ltd | 2009-04Mn doped GaN films have been studied by conductive Atomic Force Microscopy (AFM), Cathodoluminescence (CL) and Electron Beam Induced Current (EBIC). AFM measurements revealed the presence of pinholes with diameters between 130 and 380 nm. The di[...]texto impreso
Cremades Rodríguez, Ana Isabel ; Narayanan, V.C. ; Piqueras de Noriega, Javier ; Lima, A.P. ; Ambacher, O. ; Stutzmann, M. | American Institute of Physics | 2001-11-01Plasma-induced molecular beam epitaxial AlInGaN heterostructures have been characterized by spatial resolved cathodoluminescence and x-ray energy dispersive microanalysis. Competitive incorporation of Al and In has been observed, with the format[...]texto impreso
Cremades Rodríguez, Ana Isabel ; Albrecht, M. ; Voigt, A. ; Krinke, J. ; Dimitrov, R. ; Ambacher, O. ; Stutzmann, M. | Trans Tech-Scitec Publications LDT | 1998Combined electron beam induced current and transmission electron microscopy measurements have been performed on both undoped and Si-doped AlGaN epitaxial films with aluminium contents x ranging from x=0 to x=0.79. TEM analysis shows the distribu[...]texto impreso
Cremades Rodríguez, Ana Isabel ; Gorgens, L. ; Ambacher, O. ; Stutzmann, M. ; Scholz, F. | American Physical Society | 2000-01-15Structural and optical properties of Si-doped GaN thin films grown by metal-organic chemical vapor deposition have been studied by means of high resolution x-ray diffraction (XRD), atomic force microscopy, photoluminescence, photothermal deflect[...]texto impreso
Herrera, M. ; Cremades Rodríguez, Ana Isabel ; Piqueras de Noriega, Javier ; Stutzmann, M. ; Ambacher, O. | American Institute of Physics | 2004-11Cathodoluminescence (CL) in the scanning electron microscope and atomic force microscopy (AFM) have been used to study the formation of pinholes in tensile and compressively strained AlInGaN films grown on Al2O3 substrates by plasma-induced mole[...]texto impreso
Cremades Rodríguez, Ana Isabel ; Piqueras de Noriega, Javier ; Albrecht, M. ; Stutzmann, M. ; Strunk, H.P. | Elsevier Science SA | 2002-03-22InGaN quantum well (QW) structures with different thicknesses have been characterised by means of cathodoluminescence (CL) in the scanning electron microscope and transmission electron microscopy (TEM), in order to study the structural defects t[...]
