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Comparative studies have been carried out on the cathodoluminescence (CL) and photoluminescence (PL) properties of GaN implanted with Tin and GaN co-implanted with Tin and a low concentration of Er. Room temperature CL spectra were acquired in [...]texto impreso
As it has been shown elsewhere, conductance transient measurements provide quantitative information about the disordered induced gap states (DIGS) in metal-insulator-semiconductor (MIS) structures. In this work we report for the first time the D[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Dueñas, S. ; Peláez, R. ; Castán, E. ; Barbolla, J. | Materials Research Society | 1998We have obtained Al/SiNx:H/Si and Al/SiNx:H/InP Metal-Insulator-Semiconductor devices by directly depositing silicon nitride thin films on silicon and indium phosphide wafers by the Electron Cyclotron Resonance Plasma method at 200 degrees C. Th[...]texto impreso
Zaldivar, M.H. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | Materials Research Society | 1998Cathodoluminescence (CL) in the scanning electron microscope has been used to investigate the variation along the growth axis direction of luminescence emission from epitaxial GaN films. CL spectra recorded at different positions of the sample c[...]texto impreso
Maestre Varea, David ; Plugaru, R ; Cremades Rodríguez, Ana Isabel ; Piqueras de Noriega, Javier | Materials Research Society | 2003The luminescence of titanium oxide and tin oxide has been investigated by cathodoluminescence in the SEM, as a function of the structural changes induced by thermal treatments. The evolution of the luminescence of TiO2 rutile, anatase and mixtur[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dutta, P. S. | Materials Research Society | 1998Cathodoluminescence (CL) in the scanning electron microscope (SEM) has been used to investigate the effect of doping with an isoelectronic dopant, aluminum, on the native accepters and on the general structure of extended defects of gallium anti[...]texto impreso
Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plugaru, R ; Garcia, J. A. ; Tate, T. J. | Materials Research Society | 2002The luminescence properties of erbium oxide grown on crystalline and amorphous silicon substrates were studied by means of photo- and cathodoluminescence techniques. Differences in the luminescence spectra for samples grown on the two type., of [...]texto impreso
Cremades Rodríguez, Ana Isabel ; Albrecht, M. ; Ulloa, J.M. ; Piqueras de Noriega, Javier ; Strunk, H.P. ; Hanser, D. ; Davis, R. F. | Materials Research Society | 2000A series of 100 nm thick InGaN films with In content up to 14% has been grown by MOVPE on SiC substrates. Optical characterization was carried out by means of reflectance spectrometry, photoluminescence and cathodoluminescence. Optical propertie[...]texto impreso
In this work we investigate the lattice damage induced in ZnO implanted with potential group V acceptors by means of Raman scattering. ZnO samples were implanted with N and P to hi-h doses and Raman spectra were obtained prior and after rapid th[...]texto impreso
O'Donnell, KP ; Katchkanova, V. ; Wang, K. ; Martin, R.W. ; Edwards, P.R. ; Hourahine, B. ; Nogales Díaz, Emilio ; Mosselmans, J.F.W. ; De Vries, B. | Materials Research Society | 2005This presentation reviews recent lattice location studies of rare earth (RE) ions in GaN by electron emission channelling (EC) and X-ray absorption fine structure (XAFS) techniques. These studies agree that RE ions at low concentrations (whether[...]texto impreso
Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plugaru, R. | Materials Research Society | 2003Electrically active regions of nanocrystalline silicon (nc-Si) films as well as of a p-type crystalline silicon (c-Si) wafer have been investigated by using a scanning electron microscope/scanning tunneling microscope (SEM/STM) combined instrume[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dutta, P: S. | Materials Research Society | 2000GaSb p-n junctions formed by Zn diffusion in Te-doped n-GaSb single crystalline wafers have been characterized by cathodoluminescence (CL) microscopy and by scanning tunneling spectroscopy. CL plane-view observations of the Zn diffused side enab[...]
