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Castaldini, A. ; Cavallini, A. ; Fraboni, B. ; Polenta, L. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | American Physical Society | 1996-09-15Deep levels in Cd_(1-x)Zn_xTe have not yet been fully characterized and understood, even though this material is very promising for medical and optoelectronic applications. We have investigated p-type semi-insulating Cd_(0.8)Zn_(0.2)Te with cath[...]texto impreso
Castaldini, A. ; Cavallini, A. ; Fraboni, B. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | Amer Inst Physics | 1997We have investigated the electrical and optical properties of the deep levels responsible for the 1.4-1.5 eV luminescence band usually observed in II-VI compounds. We compared the energy levels found by cathodoluminescence and junction spectrosc[...]texto impreso
Castaldini, A. ; Cavallini, A: ; Fraboni, B. ; Polenta, L. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | Elsevier Science SA | 1996-12-15We have investigated deep levels in semiconducting and semi-insulating II-VI compounds, namely undoped CdTe, CdTe:Cl and CdZnTe, in order to understand their role in the compensation mechanisms. To this aim Lye have utilized both junction spectr[...]texto impreso
Castaldini, A. ; Cavallini, A. ; Fraboni, B. ; Piqueras de Noriega, Javier | Elsevier Science SA | 1994-12The disappearance of the electron trap at E_t=E_c-0.82 eV (EL2) level in highly doped samples, observed in the literature for N_D-N_A> 1x10^17 cm^(-3) has been assessed by junction spectroscopy investigations of liquid-encapsulated Czochralski G[...]texto impreso
Castaldini, A. ; Cavallini, A. ; Fraboni, B. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | American Physical Society | 1997-12-15We study, by cathodoluminescence and junction spectroscopy methods, the deep traps located near midgap in semiconducting and semi-insulating II-VI compounds, namely, undoped CdTe, CdTe:Cl, and Cd0.8Zn0.2Te. In order to understand the role such d[...]texto impreso
Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Cavallini, A. ; Fraboni, B. | Elsevier Science SA Lausanne | 1994-05Evidence for IR cathodoluminescence (CL) at 1.2 and 1.0 eV in Te-doped GaAs in the temperature range 80-300 K has been obtained. The evolution of CL intensity and half-width of emission bands after silicon implantation and annealing has been inv[...]texto impreso
Castaldini, A. ; Cavallini, A. ; Fraboni, B. ; Piqueras de Noriega, Javier | American Institute of Physics | 1995-12-01We have investigated highly doped GaAs:Te at different doping concentrations (> 10(17) cm(-3)) to assess the presence of the EL2 trap. We have utilized both capacitance and current transient spectroscopy techniques. The crucial parameter for the[...]
