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Pal, U ; Piqueras de Noriega, Javier ; Dutta, P. S. ; Bhat, H. L. ; Dubey, G. C. ; Kumar, V. ; Dieguez, E. | Materials Research Soc | 1996texto impreso
Dutta, P. S. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dieguez, E. ; Bhat, H. L. | Amer Inst Physics | 1996-07-15Diffusion of tellurium In undoped p-GaSb has been carried out. Using the cathodoluminescence and photoluminescence techniques, the luminescence centers in Te-diffused samples have been identified and compared with the Te-doped bulk GaSb. Fundame[...]texto impreso
Dutta, P. S. ; Sreedhar, A. K. ; Bhat, H. L. ; Dubey, G. C. ; Kumar, V. ; Dieguez, E. ; Pal, U. ; Piqueras de Noriega, Javier | American Institute of Physics | 1996-03-15Passivation of point and extended defects in GaSb has been observed as a result of hydrogenated amorphous silicon (a-Si:H) treatment by the glow discharge technique. Cathodoluminescence (CL) images recorded at various depths in the samples clear[...]
