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Prados Díaz, Alicia | 2012-09El bismuto (Bi) es un semimetal con propiedades electrónicas muy interesantes incluyendo una longitud de onda de Fermi grande que lo convierte en un potencial candidato para la observación de efectos cuánticos de tamaño (QSE) en nanoestructuras.[...]texto impreso
El bismuto (Bi) es un semimetal con unas propiedades electrónicas altamente interesantes, entre las que destacan su fuerte interacción espín- órbita, baja densidad de portadores, alta movilidad de éstos y una superficie de Fermi altamente anisót[...]texto impreso
We have investigated how the presence of an adsorbed hydrogen layer affects the nucleation and properties of Bi layers grown by dc electrodeposition at different overpotentials on n-GaAs(111)B substrates with a carrier concentration of 1.3.10^17[...]texto impreso
Bismuth thin films constitute a promising nanostructure for the fabrication of spin-based devices. To achieve this goal, it is necessary to obtain high-quality Bi layers with controlled and reproducible properties. Therefore, studies focused on [...]texto impreso
The surface morphology and the crystal structure of 40 nm thin Bi films electrodeposited on GaAs(111)B at different growth overpotentials have been studied by means of atomic force microscopy and X-ray diffraction, respectively. The Bi/GaAs inte[...]texto impreso
Prados Díaz, Alicia ; Pérez García, Lucas ; Guzmán, Alvaro ; Ranchal Sánchez, Rocío | Amer Chemical Soc | 2016-12-15We have studied the electrodeposition of Bi thin films on two GaAs orientations with different atomic arrangement and chemical composition, (110) and (111)B. The electrochemical properties of each substrate have been analyzed by means of cyclic [...]texto impreso
Prados Díaz, Alicia ; Ranchal Sánchez, Rocío ; Pérez García, Lucas | Pergamon-Elsevier Science Ltd. | 2015-08-20Bismuth ultra-thin films grown on n-GaAs electrodes via electrodeposition are porous due to a blockade of the electrode surface caused by adsorbed hydrogen when using acidic electrolytes. In this study, we discuss the existence of two sources of[...]texto impreso
In this work, we have explored the possibility of using light to remove the adsorbed hydrogen layer that blocks the GaAs surface when electrodepositing Bi thin films on lower-doped n-GaAs(111)B substrates. A light pulse of a few seconds applied [...]
