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Khaderbad, M. A. ; Dhar, S. ; Pérez García, Lucas ; Ploog, K. H. ; Melnikov, A. ; Wieck, A. D. | American Institute of Physics | 2007-08-13The authors have studied the effect of annealing on the magnetic and the structural properties of Gd focused ion beam implanted GaN samples. Molecular beam epitaxy grown GaN layers, which were implanted with 300 keV Gd^(3+) ions at room tempera[...]texto impreso
Dhar, S. ; Kammermeier, T. ; Ney, A. ; Pérez García, Lucas ; Ploog, K. H. ; Melnikov, A. ; Wieck, A. D. | American Institute of Physics | 2006-08-07The structural and the magnetic properties of Gd-focused ion-beam-implanted GaN layers are studied. Gd^(3+) ions were uniformly implanted in molecular beam epitaxy rown GaN layers at room temperature with an energy of 300 keV at doses ranging f[...]texto impreso
Dhar, S. ; Pérez García, Lucas ; Brandt, O. ; Trampert, A. ; Ploog, K. H. ; Keller, J. ; Beschoten, B. | American Physical Society | 2005-12We present a systematic study of growth, structural, and magnetic characterization of GaN:Gd layers grown directly on 6H-SiC(0001) substrates by reactive molecular-beam epitaxy with a Gd concentration ranging from 7x10^(15) to 2x1019 cm^(?3). Th[...]texto impreso
Pérez García, Lucas ; Lau, G. S. ; Dhar, S. ; Brandt, O. ; Ploog, K. H. | American Physical Society | 2006-11In this work we present a detailed study of the magnetic properties of GaN:Gd layers with different Gd content (6x10^(15) to 1x10^(19) cm^^ (-3)) grown by reactive molecular beam epitaxy. The temperature dependence of the magnetic properties sug[...]
