texto impreso

Cathodoluminescence and positron-annihilation study of defect distribution in III-V wafers

Domínguez-Adame Acosta, Francisco ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; De Diego, N. ; LLopis, J. ; Moser, P. | Editions Physique | 1989-06

Positron annihilation (PA) is a sensitive technique for detection of vacancy-type defects in crystals, that has been widely used in recent years to study defects in semiconductors (1). On the other side, CL and other luminescence techniques have[...]

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